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                                       Details for article 39 of 80 found articles
 
 
  Improved Drain Current Characteristics of HfO2/SiO2 Dual Material Dual Gate Extension on Drain Side-TFET
 
 
Title: Improved Drain Current Characteristics of HfO2/SiO2 Dual Material Dual Gate Extension on Drain Side-TFET
Author: Balaji, B.
Srinivasa Rao, K.
Girija Sravani, K.
B, Kalivaraprasad
Bindu Madhav, N. V.
Chandrahas, K.
Jaswanth, B.
Appeared in: SILICON
Paging: Volume 14 () nr. 18 pages 12567-12572
Year: 2022-06-16
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 39 of 80 found articles
 
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