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                                       Details for article 9 of 65 found articles
 
 
  Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate
 
 
Title: Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate
Author: Natarajan, Ramkumar
Parthasarathy, Eswaran
Appeared in: SILICON
Paging: Volume 14 () nr. 11 pages 5961-5973
Year: 2021-09-13
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 9 of 65 found articles
 
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