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Journal description
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Details for article 5 of 65 found articles
| Title: |
A Novel Nanoscale SOI MOSFET by Using a P-N Junction and an Electrically Hole Free Region to Improve the Electrical Characteristics |
| Author: |
Bozorgi, S. Amir Orouji, Ali A. Abbasi, Abdollah |
| Appeared in: |
SILICON |
| Paging: | Volume 14 () nr. 11 pages 5905-5912 |
| Year: |
2021-09-12 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 65 found articles
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