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Journal description
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Details for article 2 of 65 found articles
| Title: |
A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells |
| Author: |
Gavoshani, Amir Dehghan, Mostafa Orouji, Ali A. |
| Appeared in: |
SILICON |
| Paging: | Volume 14 () nr. 11 pages 5801-5808 |
| Year: |
2021-09-06 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 65 found articles
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