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Journal description
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Details for article 20 of 35 found articles
| Title: |
Improvising the Switching Ratio through Low-k / High-k Spacer and Dielectric Gate Stack in 3D FinFET - a Simulation Perspective |
| Author: |
Samal, Asharani Pradhan, Kumar Prasannajit Mohapatra, Sushanta Kumar |
| Appeared in: |
SILICON |
| Paging: | Volume 13 () nr. 8 pages 2655-2660 |
| Year: |
2020-08-03 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 35 found articles
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