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                                       Details for article 33 of 35 found articles
 
 
  Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System
 
 
Title: Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System
Author: Priya, G. Lakshmi
Venkatesh, M.
Balamurugan, N. B.
Samuel, T. S. Arun
Appeared in: SILICON
Paging: Volume 13 () nr. 5 pages 1691-1702
Year: 2021-04-01
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 33 of 35 found articles
 
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