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Details for article 22 of 40 found articles
| Title: |
Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET |
| Author: |
Panchanan, Suparna Maity, Reshmi Baishya, S. Maity, N. P. |
| Appeared in: |
SILICON |
| Paging: | Volume 13 () nr. 10 pages 3271-3289 |
| Year: |
2020-10-20 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 22 of 40 found articles
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