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Journal description
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Details for article 24 of 25 found articles
| Title: |
Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs) |
| Author: |
Srinivas, P. S. T. N. Kumar, Arun Tiwari, Pramod Kumar |
| Appeared in: |
SILICON |
| Paging: | Volume 13 () nr. 1 pages 25-35 |
| Year: |
2020-02-20 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 24 of 25 found articles
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