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                                       Details for article 4 of 60 found articles
 
 
  An Asymmetric Nanoscale SOI MOSFET by Means of a P-N Structure as Virtual Hole’s Well at the Source Side
 
 
Title: An Asymmetric Nanoscale SOI MOSFET by Means of a P-N Structure as Virtual Hole’s Well at the Source Side
Author: Ramezani, Zeinab
Orouji, Ali A.
Appeared in: SILICON
Paging: Volume 11 (2018) nr. 2 pages 761-773
Year: 2018
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 60 found articles
 
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