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Journal description
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Details for article 4 of 60 found articles
| Title: |
An Asymmetric Nanoscale SOI MOSFET by Means of a P-N Structure as Virtual Hole’s Well at the Source Side |
| Author: |
Ramezani, Zeinab Orouji, Ali A. |
| Appeared in: |
SILICON |
| Paging: | Volume 11 (2018) nr. 2 pages 761-773 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 60 found articles
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