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Journal description
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Details for article 5 of 60 found articles
| Title: |
A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices |
| Author: |
Maity, N. P. Maity, Reshmi Baishya, S. |
| Appeared in: |
SILICON |
| Paging: | Volume 10 (2017) nr. 4 pages 1645-1652 |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 60 found articles
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