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Journal description
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Details for article 26 of 60 found articles
| Title: |
Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes |
| Author: |
Ravikumar, K. Agilan, S. Muthukumarasamy, N. Raja, M. Lakshmanan, Raja Ganesh, R. |
| Appeared in: |
SILICON |
| Paging: | Volume 10 (2017) nr. 4 pages 1591-1599 |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 26 of 60 found articles
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