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  A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor
 
 
Title: A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor
Author: Usha, C.
Vimala, P.
Appeared in: Indian journal of physics
Paging: Volume 95 () nr. 7 pages 1365-1371
Year: 2020-07-04
Contents:
Publisher: Springer India, New Delhi
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 30 found articles
 
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