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Journal description
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Details for article 4 of 15 found articles
| Title: |
Effects of source/drain elevation and side spacer dielectric on drivability performance of non-abrupt ultra shallow junction gate underlap GAA MOSFETs |
| Author: |
Singh, Kunal Kumar, Sanjay Goel, Ekta Singh, Balraj Singh, Prince Kumar Baral, Kamalaksha Kumar, Hemant Jit, Satyabrata |
| Appeared in: |
Indian journal of physics |
| Paging: | Volume 92 (2017) nr. 2 pages 171-176 |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Springer India, New Delhi |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 15 found articles
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