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Journal description
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Details for article 15 of 33 found articles
| Title: |
Growth and dislocation distribution of single Si1-xGex/Si(001) epilayer structures grown by gas source molecular beam epitaxy |
| Author: |
Lee, Won Jae Staton-Bevan, Anne |
| Appeared in: |
Metals and materials international |
| Paging: | Volume 4 (1998) nr. 5 pages 1001-1005 |
| Year: |
1998 |
| Contents: | |
| Publisher: |
The Korean Institute of Metals and Materials, Seoul |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 15 of 33 found articles
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