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                                       Details for article 15 of 25 found articles
 
 
  Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature
 
 
Title: Growth of silicon nitride film by controlling plasma ion energy and duty ratio at room temperature
Author: Kim, Byungwhan
Lee, Sujin
Appeared in: Metals and materials international
Paging: Volume 16 (2010) nr. 4 pages 633-637
Year: 2010
Contents:
Publisher: The Korean Institute of Metals and Materials, Springer
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 15 of 25 found articles
 
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