Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies
Titel:
Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies
Auteur:
Li, Zhen Liu, Yihang Zhang, Anyi Liu, Qingzhou Shen, Chenfei Wu, Fanqi Xu, Chi Chen, Mingrui Fu, Hongyu Zhou, Chongwu