Nitride Heterostructures and High-Electron-Mobility Transistors on Composite Silicon-Polycrystalline Diamond Substrates
Titel:
Nitride Heterostructures and High-Electron-Mobility Transistors on Composite Silicon-Polycrystalline Diamond Substrates
Auteur:
Chernykh, M. Y. Ezubchenko, I. S. Mayboroda, I. O. Chernykh, I. A. Kolobkova, E. M. Perminov, P. A. Sedov, V. S. Altakhov, A. S. Andreev, A. A. Grishchenko, J. V. Martyanov, A. K. Konov, V. I. Zanaveskin, M. L.