|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 15 of 20 found articles
| Title: |
Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms |
| Author: |
Novikov, P. L. Nenashev, A. V. Rudin, S. A. Polyakov, A. S. Dvurechenskii, A. V. |
| Appeared in: |
Nanotechnologies in Russia |
| Paging: | Volume 10 (2015) nr. 3-4 pages 192-204 |
| Year: |
2015 |
| Contents: | |
| Publisher: |
Pleiades Publishing, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 15 of 20 found articles
| << previous | next >> |