Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition
Titel:
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition
Auteur:
Novikov, P. L. Donne, A. Le Cereda, S. Miglio, L. Pizzini, S. Binetti, S. Rondanini, M. Cavallotti, C. Chrastina, D. Moiseev, T. Känel, H. von Isella, G. Montalenti, F.
Verschenen in:
Optoelectronics, instrumentation and data processing