|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 15 found articles
| Title: |
Annealing of radiation-induced defects in silicon |
| Author: |
Gaidar, G. P. |
| Appeared in: |
Surface engineering and applied electrochemistry |
| Paging: | Volume 48 (2012) nr. 1 pages 78-89 |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Allerton Press, Inc., Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 15 found articles
| << previous | next >> |