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                                       Details for article 23 of 27 found articles
 
 
  Reduction in the Photosensitivity Contrast of Inhomogeneous n+–p(n)–p+ Structures of Silicon, Measured while Scanning the p–n Junction with Light
 
 
Title: Reduction in the Photosensitivity Contrast of Inhomogeneous n+–p(n)–p+ Structures of Silicon, Measured while Scanning the p–n Junction with Light
Author: Koshelev, O. G.
Appeared in: Bulletin of the Russian Academy of Sciences. Physics
Paging: Volume 84 () nr. 1 pages 44-47
Year: 2020-02-20
Contents:
Publisher: Pleiades Publishing, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 23 of 27 found articles
 
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