|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 12 of 40 found articles
| Title: |
Features of the formation of silicon nanocrystals upon the annealing of SiO2 layers implanted with Si ions |
| Author: |
Ovsyuk, N. N. Mankad, Venu Gupta, Sanjeev K. Jha, Prafulla K. Kachurin, G. A. |
| Appeared in: |
Bulletin of the Russian Academy of Sciences. Physics |
| Paging: | Volume 75 (2011) nr. 5 pages 601-604 |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Allerton Press, Inc., Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 40 found articles
| << previous | next >> |