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                                       Details for article 11 of 35 found articles
 
 
  Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
 
 
Title: Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
Author: Shin, Gahyun
Kim, Hong-Yeol
Kim, Jihyun
Appeared in: Korean journal of chemical engineering
Paging: Volume 35 (2018) nr. 2 pages 574-578
Year: 2018
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 35 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands