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                                       Details for article 59 of 128 found articles
 
 
  Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
 
 
Title: Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
Author: Zha, Chaofei
Luo, Wei
Zhang, Xia
Yan, Xin
Ren, Xiaomin
Appeared in: Nanoscale research letters
Paging: Volume 17 () nr. 1 pages xx
Year: 2022-10-27
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 59 of 128 found articles
 
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