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Journal description
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Details for article 12 of 21 found articles
| Title: |
Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs |
| Author: |
He, Jin Zhang, Xing Huang, Ru Wang, Yangyuan |
| Appeared in: |
Journal of electronics (China) |
| Paging: | Volume 19 (2002) nr. 3 pages 332-336 |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Science Press, Beijing |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 21 found articles
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