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Journal description
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Details for article 6 of 20 found articles
| Title: |
A study on hot-carrier-induced gate oxide breakdown in partially depleted SIMOX MOSFET’s |
| Author: |
Liu, Hongxia Hao, Yue Zhu, Jiangang |
| Appeared in: |
Journal of electronics (China) |
| Paging: | Volume 19 (2001) nr. 1 pages 50-56 |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Science Press, Beijing |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 6 of 20 found articles
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