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                                       Details for article 6 of 20 found articles
 
 
  A study on hot-carrier-induced gate oxide breakdown in partially depleted SIMOX MOSFET’s
 
 
Title: A study on hot-carrier-induced gate oxide breakdown in partially depleted SIMOX MOSFET’s
Author: Liu, Hongxia
Hao, Yue
Zhu, Jiangang
Appeared in: Journal of electronics (China)
Paging: Volume 19 (2001) nr. 1 pages 50-56
Year: 2001
Contents:
Publisher: Science Press, Beijing
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 20 found articles
 
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