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                                       Details for article 6 of 7 found articles
 
 
  Forward gated-diode R-G current method: A simple novel technique for characterizing lateral lightly doping region of LDD MOSFET’s
 
 
Title: Forward gated-diode R-G current method: A simple novel technique for characterizing lateral lightly doping region of LDD MOSFET’s
Author: He, Jin
Huang, Aihua
Zhang, Xing
Huang, Ru
Wang, Yangyuan
Appeared in: Journal of electronics (China)
Paging: Volume 18 (2001) nr. 2 pages 188-192
Year: 2001
Contents:
Publisher: Science Press, Beijing
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 7 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands