THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
Titel:
THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
Auteur:
Marczewski, J. Coquillat, D. Knap, W. Kolacinski, C. Kopyt, P. Kucharski, K. Lusakowski, J. Obrebski, D. Tomaszewski, D. Yavorskiy, D. Zagrajek, P. Ryniec, R. Palka, N.