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                                       Details for article 8 of 22 found articles
 
 
  Field effect transistors for terahertz detection - silicon versus III–V material issue
 
 
Title: Field effect transistors for terahertz detection - silicon versus III–V material issue
Author: Knap, W.
Videlier, H.
Nadar, S.
Coquillat, D.
Dyakonova, N.
Teppe, F.
Bialek, M.
Grynberg, M.
Karpierz, K.
Lusakowski, J.
Nogajewski, K.
Seliuta, D.
Kašalynas, I.
Valušis, G.
Appeared in: Opto-electronics review
Paging: Volume 18 (2010) nr. 3 pages 225-230
Year: 2010
Contents:
Publisher: SP Versita, Heidelberg
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 22 found articles
 
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