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                                       Details for article 6 of 8 found articles
 
 
  Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures
 
 
Title: Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures
Author: Sabooni, M.
Esmaeili, M.
Haratizadeh, H.
Monemar, B.
Paskov, P.
Kamiyama, S.
Iwaya, M.
Amano, H.
Akasaki, I.
Appeared in: Opto-electronics review
Paging: Volume 15 (2007) nr. 3 pages 163-167
Year: 2007
Contents:
Publisher: Versita, Warsaw
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 8 found articles
 
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