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Journal description
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Details for article 13 of 22 found articles
| Title: |
Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide |
| Author: |
Goldman, E. I. Kukharskaya, N. F. Narishkina, V. G. Chucheva, G. V. |
| Appeared in: |
Semiconductors |
| Paging: | Volume 45 (2011) nr. 7 pages 944-949 |
| Year: |
2011 |
| Contents: | |
| Publisher: |
SP MAIK Nauka/Interperiodica, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 22 found articles
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