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Journal description
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Details for article 14 of 34 found articles
| Title: |
Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies |
| Author: |
Il’in, I. V. Uspenskaya, Yu. A. Kramushchenko, D. D. Muzafarova, M. V. Soltamov, V. A. Mokhov, E. N. Baranov, P. G. |
| Appeared in: |
Physics of the solid state |
| Paging: | Volume 60 (2018) nr. 4 pages 644-662 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Pleiades Publishing, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 34 found articles
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