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                                       Details for article 9 of 32 found articles
 
 
  Electrically stimulated movement of edge dislocations in silicon in the temperature range 300–450 K
 
 
Title: Electrically stimulated movement of edge dislocations in silicon in the temperature range 300–450 K
Author: Skvortsov, A. A.
Orlov, A. M.
Frolov, V. A.
Solov’ev, A. A.
Appeared in: Physics of the solid state
Paging: Volume 42 (2000) nr. 11 pages 2054-2060
Year: 2000
Contents:
Publisher: Nauka/Interperiodica, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 9 of 32 found articles
 
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