|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 8 of 39 found articles
| Title: |
Current switching in bistable structures: Heavily doped n+-polysilicon-tunnel-oxide layer-n-silicon |
| Author: |
Osipov, V. Yu. |
| Appeared in: |
Physics of the solid state |
| Paging: | Volume 39 (1997) nr. 3 pages 402-406 |
| Year: |
1997 |
| Contents: | |
| Publisher: |
Nauka/Interperiodica, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 39 found articles
| << previous | next >> |