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Journal description
All volumes of the corresponding journal
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Details for article 19 of 64 found articles
| Title: |
Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate |
| Author: |
Sengupta, Anumita Islam, Aminul |
| Appeared in: |
Microsystem technologies |
| Paging: | Volume 25 (2018) nr. 5 pages 1927-1935 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Springer Berlin Heidelberg, Berlin/Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 19 of 64 found articles
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