Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
Titel:
Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
Auteur:
Stepikhova, M. V. Zhigunov, D. M. Shengurov, V. G. Timoshenko, V. Yu. Krasil’nikova, L. V. Chalkov, V. Yu. Svetlov, S. P. Shalygina, O. A. Kashkarov, P. K. Krasil’nik, Z. F.