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  Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the $$[2\bar 1\bar 1]$$ direction
 
 
Title: Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the $$[2\bar 1\bar 1]$$ direction
Author: Galiev, G. B.
Mokerov, V. G.
Kul’bachinskii, V. A.
Kytin, V. G.
Lunin, R. A.
Derkach, A. V.
Vasil’evskii, I. S.
Appeared in: Doklady physics
Paging: Volume 47 (2002) nr. 6 pages 419-421
Year: 2002
Contents:
Publisher: Nauka/Interperiodica, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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