Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Titel:
Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Auteur:
Galiev, G. B. Vasiliev, A. L. Vasil’evskii, I. S. Imamov, R. M. Klimov, E. A. Klochkov, A. N. Lavruhin, D. V. Maltsev, P. P. Pushkarev, S. S. Trunkin, I. N.