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Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon |
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Title: |
Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon |
Author: |
Roeckerath, M. Lopes, J. M. J. Durğun Özben, E. Sandow, C. Lenk, S. Heeg, T. Schubert, J. Mantl, S. |
Appeared in: |
Applied physics. Part A, Materials science and processing |
Paging: |
Volume 94 (2008) nr. 3 pages 521-524 |
Year: |
2008 |
Contents: |
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Publisher: |
Springer-Verlag, Berlin/Heidelberg |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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