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                                       Details for article 27 of 38 found articles
 
 
  Photoluminescence properties of p-type InGaAsN grown by RF plasma-assisted molecular beam epitaxy
 
 
Title: Photoluminescence properties of p-type InGaAsN grown by RF plasma-assisted molecular beam epitaxy
Author: Xie, S.Y.
Yoon, S.F.
Wang, S.Z.
Appeared in: Applied physics. Part A, Materials science and processing
Paging: Volume 81 (2004) nr. 5 pages 987-990
Year: 2004
Contents:
Publisher: Springer Berlin Heidelberg, Berlin/Heidelberg
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 27 of 38 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands