|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 10 of 17 found articles
| Title: |
Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress |
| Author: |
Strzałkowski, I. Kowalski, M. |
| Appeared in: |
Applied physics. Part A, Materials science and processing |
| Paging: | Volume 63 (1996) nr. 2 pages 179-182 |
| Year: |
1996 |
| Contents: | |
| Publisher: |
Springer-Verlag, Berlin/Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 17 found articles
| << previous | next >> |