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  Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD
 
 
Title: Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD
Author: Lee, Tae-Hee
Park, Se-Rim
Choi, Ji-Soo
Chung, Seung-Hwan
Kim, Min-Yeong
Lee, Geon-Hee
Cho, Seong-Ho
Bae, Si-Young
Kim, Il Ryong
Kim, Min Kyu
Lim, Byeong Cheol
Schweitz, Michael A.
Koo, Sang-Mo
Appeared in: Applied physics. Part A, Materials science and processing
Paging: Volume 130 () nr. 10 pages xx
Year: 2024-09-10
Contents:
Publisher: Springer Berlin Heidelberg, Berlin/Heidelberg
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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