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Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction |
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Title: |
Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction |
Author: |
Xi, Kai Bi, Jinshun Chu, Jiamin Xu, Gaobo Li, Bo Wang, Haibin Liu, Ming Sandip, Majumdar |
Appeared in: |
Applied physics. Part A, Materials science and processing |
Paging: |
Volume 126 () nr. 6 pages xx |
Year: |
2020-05-22 |
Contents: |
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Publisher: |
Springer Berlin Heidelberg, Berlin/Heidelberg |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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