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Details for article 17 of 76 found articles
| Title: |
Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure |
| Author: |
Li, Tingting Wang, Xiaolei He, Xiaobin Tang, Bo Han, Kai Qi, Zeming Jiang, Haojie Xiong, Wenjuan Zhang, Peng Li, Junfeng Yan, Jiang Xiang, Jinjuan Lin, Fujiang |
| Appeared in: |
Applied physics. Part A, Materials science and processing |
| Paging: | Volume 126 () nr. 5 pages xx |
| Year: |
2020-04-30 |
| Contents: | |
| Publisher: |
Springer Berlin Heidelberg, Berlin/Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 76 found articles
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