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Journal description
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Details for article 5 of 70 found articles
| Title: |
Analytical modeling of threshold voltage and subthreshold swing in Si/Ge heterojunction FinFET |
| Author: |
Das, Rajashree Baishya, Srimanta |
| Appeared in: |
Applied physics. Part A, Materials science and processing |
| Paging: | Volume 125 (2019) nr. 10 pages 1-9 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Springer Berlin Heidelberg, Berlin/Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 70 found articles
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