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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling |
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Titel: |
Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling |
Auteur: |
Bayu Aji, L. B. Stavrou, E. Wallace, J. B. Boulle, A. Debelle, A. Kucheyev, S. O. |
Verschenen in: |
Applied physics. Part A, Materials science and processing |
Paginering: |
Jaargang 125 (2018) nr. 1 pagina's 1-5 |
Jaar: |
2018 |
Inhoud: |
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Uitgever: |
Springer Berlin Heidelberg, Berlin/Heidelberg |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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