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Details for article 5 of 50 found articles
| Title: |
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 |
| Author: |
Fiorenza, P. Swanson, L. K. Vivona, M. Giannazzo, F. Bongiorno, C. Frazzetto, A. Roccaforte, F. |
| Appeared in: |
Applied physics. Part A, Materials science and processing |
| Paging: | Volume 115 (2013) nr. 1 pages 333-339 |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Springer Berlin Heidelberg, Berlin/Heidelberg |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 50 found articles
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