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Details for article 3 of 13 found articles
| Title: |
Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal |
| Author: |
Makovskaya, T. I. Danilyuk, A. L. Krivosheeva, A. V. Shaposhnikov, V. L. Borisenko, V. E. |
| Appeared in: |
Russian microelectronics |
| Paging: | Volume 49 () nr. 7 pages 507-515 |
| Year: |
2021-01-27 |
| Contents: | |
| Publisher: |
Pleiades Publishing, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 13 found articles
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