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                                       Details for article 4 of 7 found articles
 
 
  Simulation of Resistive Switching in Memristor Structures Based on Transition Metal Oxides
 
 
Title: Simulation of Resistive Switching in Memristor Structures Based on Transition Metal Oxides
Author: Permyakova, O. O.
Rogozhin, A. E.
Appeared in: Russian microelectronics
Paging: Volume 49 () nr. 5 pages 303-313
Year: 2020-09-24
Contents:
Publisher: Pleiades Publishing, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 7 found articles
 
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