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                                       Details for article 3 of 7 found articles
 
 
  Modeling the Characteristics of SOI CMOS Nanotransistors with an Asymmetric Surrounding Gate
 
 
Title: Modeling the Characteristics of SOI CMOS Nanotransistors with an Asymmetric Surrounding Gate
Author: Masal’skii, N. V.
Appeared in: Russian microelectronics
Paging: Volume 49 () nr. 5 pages 324-331
Year: 2020-09-24
Contents:
Publisher: Pleiades Publishing, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 7 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands